The high acuracy finite element method can very efficiently reproduce all the results of the transfer matrix method.

1. ''A transfer matrix algorithm for the calculation of band structure of semiconductor superlattices''; L. R. Ram-Mohan, K. H. Yoo, and R. L. Aggarwal, Physical Review B 38, 6151-6159 (1988).
2. ''HgTe/CdTe superlattice band calculation with a transfer matrix algorithm''; K. H. Yoo, R. L. Aggarwal, and L. R. Ram-Mohan, J. Vac. Sci. Technol. A 7, 415-419 (1989).
3. ''Effect of band nonparabolicity in GaAs/Ga[x]Al[1-x]As semiconductor quantum wells''; K. H. Yoo, L. R. Ram-Mohan, and D. F. Nelson, Physical Review B 39, 12808-12813 (1989).
4. ''The diagonal representation for the transfer matrix method for obtaining electronic energy levels in layered semiconductor heterostructures''; B. Chen, M. Lazzouni, and L. R. Ram-Mohan, Physical Review B 45, 1204-1212 (1992).
5. ''Lecture Notes on The Transfer Matrix Method for the energy levels of semiconductor quantum wells and superlattices'', L. R. Ram-Mohan, Lecture Notes (1986, updated annually, 2007). 140 pages; Available in preprint pdf format.